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Short Communication
Short Communication. Design and fabrication of bulk silicon-based temperature sensor† . Resistivity vs temperature plot of Si at various doping concentrations.
http://journal.library.iisc.ernet.in/vol200105/paper4/rajesh.pdf

 

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1.1 Silicon Crystal Structure
OUTLINE. Carrier scattering mechanisms; Drift current; Conductivity and resistivity; Relationship between band diagrams & V, e . Note: This plot does not apply for compensated material! . Consider a Si sample doped with 1016/cm3 Boron.
http://www-inst.eecs.berkeley.edu/~ee130/sp07/lectures/lecture6.ppt

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Spreading Resistance Profiling - Wikipedia, the free encyclopedia
Semiconductor devices depend on the distribution of carriers (electrons or holes) within their . The probes produce a negligible probe to silicon resistance (nearly ohmic contact) over the . The tool is used primarily for determining doping structures in silicon semiconductors. . Carrier concentration is plotted against depth.
http://en.wikipedia.org/wiki/Spreading_Resistance_Profiling

Doping and Mobility
The first graph gives an Arrhenius representation or Arrhenius plot of the . and mobility: The resisitivity of Si as a function of doping for electrons and holes .
http://www.tf.uni-kiel.de/matwis/amat/semi_en/kap_2/illustr/i2_2_3.html

Solecon Laboratories - Resistivity and Concentration Calculators
Silicon/Germanium Resistivity and Carrier Concentration Calculators . Between Resistivity and Dopant Density for Phosphorus-and Boron-Doped Silicon (May .
http://www.solecon.com/sra/rho2ccal.htm

Control of The Weak Phosphorus Doping in Polysilicon M ...
crystalline silicon and the advantages of amorphous silicon (a-Si:H) have attracted . reported in a resistivity - doping concentration plot, previously obtained by .
http://faculty.ksu.edu.sa/MohamedFathallah/Publications/SCIENTIFICNET_7021017_14396243094820[1].pdf

Investigation of Contact Resistance and Aluminum Spiking during ...
measurements obtained varied with initial substrate doping concentration, but the . resistivity compound that forms between silicon and several metals. . The y- intercept of a plot of RT vs. pad separation, then, is approximately equal to 2RC, .
http://www.physics.ohio-state.edu/~reu/03reu/REU2003reports/Zimmerman_final.pdf

Resistivity-Dopant Density Relationship for Phosphorus-Doped Silicon
between the resistivity and dopant density of silicon. The conversion between . ASTM standard, is the reference chart normally used by workers in the field.
http://nvlpubs.nist.gov/nistpubs/sp958-lide/289-290.pdf

Resistivity & Mobility Calculator for Various Doping Concentrations ...
Dopant: Arsenic Boron Phosphorus. Impurity Concentration: (cm-3). Mobility: [cm 2/V-s]. Resistivity: [?-cm]. Calculations are for a silicon substrate.
http://www.cleanroom.byu.edu/ResistivityCal.phtml

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Bank of America

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